Ion beam implantation


Ion beam implantation is a process when accelerated ions are shooting into the solid. This methods is optimal for change of physical, chemical, electric or optic properties of the solid. Ion beam implantation is capable of preparation of layers with high density and good defined depth profile and for change of crystalline structure of substrate.

Application of ion beam implantation:
  • doping of semiconductors

  • doping of insulators with metal ions

  • creation of nanoparticles

  • change of electric and optic properties of solid



The typically produced ion beams available at Tandetron facility are provided in the table with the appropriate ion beam currents. The additionally requested ions for your experiments must be consulted with the instrument responsible and tested before the experiment will be proposed at Tandetron in the frame of CANAM.